Single Photon Detectors Based on InP/InGaAs/InP Avalanche Photodiodes

V. V. Preobrazhenskii,I. B. Chistokhin,M. A. Putyato,N. A. Valisheva,E. A. Emelyanov,M. O. Petrushkov,A. S. Pleshkov,I. G. Neizvestny,I. I. Ryabtsev

Автометрия（2022）

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摘要

The design and fabrication of a single photon detector based on InP/InGaAs/InP single-photon avalanche diodes (SPADs) operating in Geiger mode at a telecommunication wavelength of 1550 nm are discussed. The SPAD design, the method for obtaining InP/InGaAs/InP heterostructures by molecular beam epitaxy, fabrication of SPAD chips using planar technology, and specific features of selective zinc doping of p -regions in the InP layer of the developed electronic circuits for measuring main SPAD parameters are described. Preliminary results of measurements of the parameters of the fabricated SPADs are presented.

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关键词

single photon detector,avalanche photodiode,Geiger mode,heterostructure,InP/InGaAs/InP,I–V characteristics,dark current,photon detection efficiency,dark count rate,afterpulsing coefficient,molecular beam epitaxy,selective doping

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