Rapid-deposited high-performance submicron encapsulation film with in-situ plasma oxidized Al layer inserted

Abstract High-performance submicron thin-film encapsulation deposited rapidly under low temperature plays an important role in Si-based organic micro-displays. In this letter, the formation mechanism of high-performance encapsulation films consisting of SiO2/in-situ plasma oxidized Al at 77°C is explained. We think that the reason why the performance of encapsulation films deposited by this method behave better than the simple stacking of SiO2/Al2O3 is the formation of Al-O-Si bonds. By further optimizing the process parameters, the water vapor transmission rate and the transmittance in the visible region have been improved, which reached 10-6 g∙m 2∙day 1 and 90%, respectively.