A CMOS-based Characterisation Platform for Emerging RRAM Technologies
2022 IEEE International Symposium on Circuits and Systems (ISCAS)(2022)
摘要
Mass characterisation of emerging memory devices is an essential step in modelling their behaviour for integration within a standard design flow for existing integrated circuit designers. This work develops a novel characterisation platform for emerging resistive devices with a capacity of up to 1 million devices on-chip. Split into four independent sub-arrays, it contains on-chip column-parallel DACs for fast voltage programming of the DUT. On-chip readout circuits with ADCs are also available for fast read operations covering 5-decades of input current (20nA to 2mA). This allows a device’s resistance range to be between 1k$\Omega$ and 10M$\Omega$ with a minimum voltage range of ±1.5V on the device.
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关键词
ReRAM,RRAM,memristor,characterisation,array
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