Surface Topography of Si/TiO2 Stacked Layers on Silicon Substrate Deposited by KrF Excimer Laser Ablation

This study investigates the surface topography of the deposited thin films versus the distance between target and substrate (d(TS)) inside a laser ablation equipment. The profile of the rough surface was obtained by atomic force microscopy data analysis based on power spectral density and the roughness-length scale (RLS) functions. The roughing on the top film is analyzed considering the previous topography of the underneath surface for each consecutive TiO2 and Si deposition onto Si (100) wafer. The buried oxide layer inside of Si/TiO2/c-Si structure, obtained by KrF excimer laser ablation was characterized by complementary techniques as spectral ellipsometry, X-ray reflectometry, and X-ray diffraction.