Light-assisted defects migration in cuprous iodide (CuI)

Yonghui Zhang,Lishu Liu,Zhaoxiong Wang,Yingying Yang,Fei Xing

Journal of Alloys and Compounds（2022）

引用 10|浏览5

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摘要

•CuI device exhibits resistive memory character.•Time-lapsed photoluminescence is employed to study the point defects of CuI.•Light-assisted defects migration mechanism is proposed.

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关键词

CuI,Iodine vacancy,Defect migration,Ion migration,Photoluminescence

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