Strain and annealing temperature effects on the optical properties of GaNAs layers grown by molecular beam epitaxy
Thin Solid Films(2022)
摘要
•The thermal treatment efficacy depends on the GaNAs/GaAs residual strain.•In thinner layers lattice disorder created by heating is higher, according to raman.•An appropriate annealing process redshifts the conduction band signature.•A strategy for resolve thickness effect on ganas annealing optimization is given.
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关键词
Gallium arsenide nitride,Rapid thermal annealing,Photoreflectance,Ellipsometry,Molecular beam epitaxy
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