Quantitative analysis of effect of dopant interaction on microstructural, physical, and electrical properties in laser-annealed SiGe:B:Ga film

Kiseok Lee,Seunghyun Baik,Joosung Kang,Hyerin Shin,Dongmin Yoon,Soyoung Kim,Jinwoo Moon,Dong-Chan Suh,Dae-Hong Ko

Thin Solid Films（2022）

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摘要

•The effect of dopant interaction on properties of SiGe:B:Ga films is investigated.•Nanosecond laser annealing is applied in the preparation of the SiGe:B:Ba films.•B and Ga interaction is calculated from parameters of differently doped SiGe films.•Electrical properties of SiGe:B:Ga films are studied via dopant profile analysis.

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关键词

Silicon germanium,Gallium doping,Nanosecond laser annealing,Dopant interaction

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