Influence of near threshold energy electron irradiation on the thermal conductivity of IIa diamond

Diamond has the advantages of excellent thermal conductivity, and it is the material with the largest thermal conductivity currently known, which makes it the ideal heat sink. However, in the process of processing or as a heat sink for electronic devices, diamond is often exposed to a high-frequency, high-voltage, high-temperature, and high-energy environment, which has greatly affected the performance of diamonds. Therefore, in this paper, it systematically explores the influence of near threshold energy electron irradiation and annealing at different temperatures on the thermal conductivity of IIa diamond by the method of laser excited Raman spectroscopy. The results show that before 900 degrees C annealing, the main factor affecting thermal conductivity in IIa diamond is the large number of vacancy defects caused by near threshold energy electron irradiation. The irradiation and annealing both affect the thermal conductivity by controlling the vacancy defects concentration.