Epitaxial growth of beta-Ga2O3 on SrTiO3 (001) and SrTiO3-buffered Si (001) substrates by plasma-assisted molecular beam epitaxy

Thin Ga2O3 films were deposited by plasma-assisted molecular beam epitaxy on SrTiO3 (001) and SrTiO3 -buffered Si (001) substrates. Examination using reflection-high-energy electron diffraction, x-ray diffraction, and transmission electron microscopy shows a consistent picture of (100)- and ((1) over bar 12)-oriented beta-Ga2O3 grains. The structural alignments are beta-Ga2O3 [010] parallel to STO < 110 > and beta-Ga2O3 [021] parallel to STO < 100 >, respectively, each with four in-plane rotational domain variants. Successful integration of epitaxial beta-Ga2O3 with Si could enable major opportunities for monolithically integrated Ga2O3 technology by serving as a high-quality seed layer for further epitaxial growth. Published under an exclusive license by AIP Publishing.