An estimation of 2DEG density for GaN HEMT using analytical equation considering the charge conservation low

Amgad A. Al-Saman,Eugeny A. Ryndin,Yi Pei,Fujiang Lin

Solid-State Electronics（2022）

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摘要

•An analytical physical-based model for electron concentration in GaN HEMT.•The model considers the charge conservation law and positive charge in channel.•The model in excellent agreement with the numerical data.

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关键词

AlGaN/GaN (HEMTs),Compact modelling,2-DEG charge density,Analytical modelling,FET transistors

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