Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

Thi Huong Ngo,Rémi Comyn,Sébastien Chenot,Julien Brault,Benjamin Damilano,Stéphane Vézian,Eric Frayssinet,Flavien Cozette,Nicolas Defrance,François Lecourt,Nathalie Labat,Hassan Maher,Yvon Cordier

Solid-State Electronics（2022）

引用 4|浏览18

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摘要

•Selective sublimation of p-GaN is developed to fabricate enhancement-mode HEMTs.•AlGaN regrowth drastically reduces access resistances in enhancement-mode HEMTs.•Sublimation and regrowth are combined to co-integrate E/D-mode GaN HEMTs.

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关键词

HEMT,GaN,Selective sublimation,Regrowth

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