Defects-induced transition in low-temperature electrical properties of boron carbon nitride thin films

The electrical properties of boron carbon nitride (BCN) were studied using a thin-film device of the material. Fourier transform infrared spectroscopy spectrum demonstrates the atomic intermixing of boron, carbon, and nitrogen in BCN film. Also, bonding configuration and linkage of carbon with more electronegative nitrogen atoms were observed. X-ray photoelectron spectroscopy analysis shows the dominance of graphitic carbon and h-BN domains in the deposited film. The photoluminescence studies of the deposited film show a broad emission in the ultraviolet and visible region due to band-to-band transition of BCN and defect states-induced emission, respectively. The deposited film shows the low dielectric constant value of 2.97 with the variation of temperature and frequency. Low-temperature studies show an increase in conductivity (obtained σ = 2.98 × 10 –4 S/cm) from 223 to 273 K due to the dominance of BCN superlattice. In contrast, a reduction in conductivity is observed from 273 to 300 K with the increase in inter-grain boundary area and the ascendency of the boron nitride domain.