A robust single device MOSFET series resistance extraction method considering horizontal-field-dependent mobility (vol 61, SC1016, 2022)

A simple MOSFET series resistance extraction method using multiple drain current versus gate voltage curves of a single device is proposed, where mobility modulation by a horizontal electric field (i.e., weak velocity saturation) is taken into account. The method is validated using TCAD, where series resistance determined from internal potential distributions was used as a reliable reference. Measurement results were also obtained which further support the validity of the method.