Partial Regrowth of Optical-Gain Section for Improved Wafer Process Flexibility of InP Photonic Integrated Circuits

Journal of Lightwave Technology(2022)

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摘要
We developed a semiconductor regrowth scheme for InP photonic integrated circuits (PICs) with optical-gain sections. Unlike conventional semiconductor regrowth schemes, a limited area corresponding to a 200-μm waveguide of an original epitaxial wafer is replaced with an optical-gain material, which improves the flexibility of a PIC process design. In this paper, we describe the partial regrowth (P...
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Indium phosphide,III-V semiconductor materials,Quantum well devices,Semiconductor optical amplifiers,Integrated optics,Optical sensors,Optical fiber sensors
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