Anomalous change of carrier transport property of ferroelectric Hf0.5Zr0.5O2 thin films in the first poling treatment
JAPANESE JOURNAL OF APPLIED PHYSICS(2022)
摘要
Carrier transport properties of ferroelectric Hf0.5Zr0.5O2 thin films have been investigated on a metal-ferroelectric-metal (MFM) capacitor in the first current flow of ferroelectric poling treatment. In the current-voltage (I-V) measurement of the MFM capacitor, a kink or discontinuity point of the derivative in the I-V characteristics appears, and after a cyclic voltage sweep this kink disappears. This phenomenon is different from the ferroelectric instabilities after application of several thousand or million voltage cycles reported as wake-up and fatigue. From the analysis using a Poole-Frenkel plot of the I-V characteristics, it is suggested that irreversible trap generation by electric field application occurs in poling treatment.
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关键词
Hafnium oxide, Ferroelectrics, Oxygen vacancy, Poole-Frenkel, Carrier transport property
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