Effect of 150 keV Ti+ ion implantation on the structural, optical, and electrical properties of nonstoichiometric WO2.72 thin films

•Electron-beam evaporated nonstoichiometric WO2.72 thin films implanted with low energy 150 keV Ti+ ions.•Implantation results in defragmentation and realignment of grains.•Ti implants cause bandgap narrowing along with increased Urbach energy.•Reduced PL emissions manifest the occurrence of more nonradiative and Auger-type recombination.•Semiconductor to metal transition observed in thin film implanted with the highest Ti+-ions fluence.