Auger Electron Spectroscopy (AES) and X-ray Photoelectron Spectroscopy (XPS) Profiling of Self Assembled Monolayer (SAM) Patterns Based on Vapor Deposition Technique

It is crucial to develop novel metrology techniques in the semiconductor fabrication process to accurately measure a film's thickness in a few nanometers, as well as the material profile of the film. Highly uniform trichlorosilane (1H,1H,2H,2H-perfluorodecyltrichlorosilane, FDTS) derived SAM film patterns were fabricated by several conventional semiconductor fabrication methods combined, including photolithography, SAM vapor deposition, and the lift-off technique. Substantial information can be collected for FDTS SAM film patterns when Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) techniques are incorporated to investigate this material. Precise two-dimensional (2D) FDTS SAM film patterns were reconstructed through mapping analysis of corresponding elements and chemical state peaks by AES and XPS. Additionally, three-dimensional (3D) FDTS SAM film patterns were also reconstructed layer by layer through gas cluster ion beam (GCIB) etching and XPS analysis. These characterization results demonstrate that FDTS SAM film patterns based on the vapor deposition method are highly uniform because the vacuum and precise gas-delivery system exclude ambient environmental interference efficiently and ensure reaction process repeatability. AES and XPS techniques could be used for metrology applications in the semiconductor process with high-quality SAM microstructures and nanostructures.