Doping engineering: Highly improving hydrogen evolution reaction performance of monolayer SnSe

By using the first-principles approach, we explore the hydrogen evolution reaction (HER) performance of SnSe monolayer. It is found that the SnSe monolayer with or without intrinsic defects is not good HER catalyst. By doping eighteen different elements at Sn or Se sites of the SnSe monolayer, we find that the elements P and In can effectively reduce the free energies of hydrogen (H) adsorption (ΔG) to −0.1 eV and 0.21 eV, much lower than 1.45 eV of perfect monolayer SnSe. This is attributed to great dispersion of electronic density of states of absorbed hydrogen atom having small interactions with doping elements. However, strong hybridizations between H and doping elements (K and Te) increase the ΔG values of doping systems (ΔG = 2.84 eV and ΔG = 1.77 eV).