Calculation of the Temperature Dependence of the Coulomb-Acceptor State Energy in a Narrow-Gap HgCdTe Solid Solution

Semiconductors(2022)

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摘要
The energies of the localized and resonant states of a Coulomb acceptor in a narrow-gap HgCdTe solid solution are calculated at different temperatures. A universal technique for calculating the localized- and resonant-state energies is proposed. It is theoretically proven that these energies remain almost unchanged in a wide temperature range from 0 to 100 K. The calculation is performed by the scattering-matrix method in the spherically symmetric three-band Kane model, which takes into account the conduction band and two upper valence bands.
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关键词
impurity, resonance state, mercury cadmium telluride, scattering matrix
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