Cryogenic Nanoelectromechanical Switch Enabled by Bi2Se3 Nanoribbons

Nanoelectromechanical (NEM) switches are potential candidates for memory and logic devices for low standbycurrent and harsh environment applications. Cryogenic operation of these devices would allow to use them, e.g., in space probes and in conjunction with quantum computers. Herein, it is demonstrated that cryogenic application requirements such as good flexibility and conductivity are satisfied by using Bi2Se3 nanoribbons as active elements in NEM switches. Experimental proof of principle NEM switching at temperatures as low as 5 K is achieved in volatile and non-volatile reversible regimes, exhibiting distinct ON and OFF states, backed by theoretical modelling. The results open new avenues for research and development of NEM systems at cryogenic temperatures.