Growth-sector dependence of morphological, structural and optical features in boron-doped HPHT diamond crystals

Semiconducting boron-doped diamond single crystals of cubo-octahedral habit with prevalent development of octahedron {111} faces and insignificant area of cube {001}, rhombo-dodecahedron {110} and tetragon-trioctahedron {311} faces were obtained using solution-melt crystallization at high pressure 6.5 GPa and temperatures 1380...1420 degrees C. Using the Fe-Al solvent, which allows controlled incorporation of boron dopant between 2.10(-4)...10(-2 )at.% made it possible to vary the electro-physical properties of the crystals. Methods of micro-photogrammetry, atomic force microscopy, and micro-Raman spectroscopy were applied to reveal sectoral inhomogeneity of impurity composition and morphology of different crystal faces. The obtained crystals were shown to have high structural perfection and boron concentration ranging approximately from 1.10(17) up to 7.10(18) cm(-3). An increase in boron concentration increases the area of {111} faces relatively to the total crystal area. Nanoscale morphological features like growth terraces, step-bunching, dendrite-like nanostructures, columnar substructures, negative growth pyramids on different crystal faces are shown to reflect peculiarities of carbon dissolution at high pressures and temperatures. The changes in the crystals' habit and surface morphology are discussed in relation to inhomogeneous variation of thermodynamic conditions of crystal growth and dissolution at different boron concentrations.