Carrier transport effect on the high speed modulation performance of integrated optoelectronic transceiving chip

In this paper, we analyzed the carrier transport effect on the high-speed modulation performance of the integrated optoelectronic transceiving chip (IOTC). It will be determined by the hole transporting time through the p-side cladding layer of the IOTC VCSEL unit's intrinsic SCH cavity. For IOTC with long cavity length (1λ), shorter hole transporting time will result in better dynamic performance, obtaining 3 dB modulation bandwidth from 9.55 to 11.2 GHz. For IOTC with short cavity length (1/2λ), longer hole transporting time will result in better dynamic performance, obtaining 3 dB modulation bandwidth from 8.75 to 11.1 GHz. Graphic abstract