High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer.

Md Iktiham Bin Taher,Yacine Halfaya, Rouba Alrammouz,Mathieu Lazerges,Aurelien Randi,Tarik Moudakir,Nossikpendou Yves Sama,Thomas Guermont,Nicolas Pelissier, Thomas Pichler, Mederic Piedevache,Jacques Pironon,Simon Gautier

2021 IEEE SENSORS（2021）

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Abstract

Gas sensors based on AlGaN/GaN high-electronmobility transistors (HEMTs) with indium tin oxide (ITO) gates as functional layers were fabricated to detect hydrogen gas. Several sensing metrics such as the changes in current, sensitivity, and response time confirmed the dependence of the sensing response on the gas concentration.

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Key words

Field-effect transistor,ITO,AlGaN,GaN,HEMT,gas sensor

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