High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer.

2021 IEEE SENSORS(2021)

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摘要
Gas sensors based on AlGaN/GaN high-electronmobility transistors (HEMTs) with indium tin oxide (ITO) gates as functional layers were fabricated to detect hydrogen gas. Several sensing metrics such as the changes in current, sensitivity, and response time confirmed the dependence of the sensing response on the gas concentration.
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关键词
Field-effect transistor, ITO, AlGaN, GaN, HEMT, gas sensor
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