The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes

C. Liao,E. Fretwurst,E. Garutti,J. Schwandt,M. Moll,A. Himmerlich,Y. Gurimskaya,I Pintilie,A. Nitescu,Z. Li,L. Makarenko

IEEE Transactions on Nuclear Science（2022）

引用 9|浏览22

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摘要

In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV ( $E_{\text {kin}}$ ) protons, including activation energy, defect concentration, as well as the annealing behavior. At first iso...

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关键词

Annealing,Temperature measurement,Current measurement,Voltage measurement,Boron,Capacitance-voltage characteristics,Radiation effects

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