Detailed study of reactively sputtered ScN thin films at room temperature

To contemplate an alternative approach for the minimization of diffusion at high temperature, present findings impart viability of room-temperature deposited reactively sputtered ScN thin films. The adopted route endows precise control over the RN2 flow for a methodical structural phase evolution from Sc→ScN and probe the correlated physical aspects of the highly textured ScN samples. In the nitrided regime i.e. at RN2 = 2.5–100% flow, incorporation of unintentional oxygen defects was evidenced from surface sensitive soft x-ray absorption spectroscopy study, though less compared to their metal (RN2 = 0%) and interstitial (RN2 = 1.6%) counterparts, due to higher Gibbs free energy for Sc-O-N formation with no trace of ligand field splitting around the O K-edge spectra. To eradicate the skepticism of appearance of N K-edge (401.6 eV) and Sc L-edge (402.2 eV) absorption spectra adjacent to each other, the first-ever Sc K-edge study has been adopted to validate complementary insight on the metrical parameters of the Sc-N system. Optical bandgaps of the polycrystalline ScN thin film samples were found to vary between 2.25 and 2.62 eV as obtained from the UV–vis spectroscopy, whereas, the nano-indentation hardness and modulus of the as-deposited samples lie between 15–34 GPa and 152–476 GPa, respectively following a linearly increasing trend of resistance to plastic deformations with an exception at 34 GPa in case of RN2 = 5% sample. Besides, contrary to other early 3d transition metal nitrides (TiN, VN, CrN), a comprehensive comparison of noticeably large homogeneity range in Sc-N has been outlined to apprehend the minuscule lattice expansion over the large RN2 realm.