Fano resonance of optical phonons in a multilayer graphene stack
JAPANESE JOURNAL OF APPLIED PHYSICS(2021)
摘要
We studied Fano interference between the Raman spectrum of G-band phonons and electron continuum in a multilayer graphene stack. The thickness and power dependencies of the Fano interference coefficient divide 1/q divide in the G-mode, where q is the Fano asymmetry parameter, were spatially visualized and analyzed using the Gaussian-convoluted Breit-Wigner-Fano function. The estimated divide 1/q divide decreases with an increase in the layer number and laser power in the low-power region at least for monolayer, bilayer, and trilayer graphene. In the higher-power region, divide 1/q divide increases with power only for monolayer graphene. The observed behaviors of divide 1/q divide reflect the phase difference of Raman signals from the electron continuum and G-band and possibly originate from changes in the electronic relaxation time and the Fermi level of graphene owing to the laser heating of the sample.
更多查看译文
关键词
graphene,Raman scattering,electron phonon coupling,Fano resonance
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要