Novel Metal Chalcogenide-Conducting Polymer Hybrid Material for Electronic Memory Devices

New hybrid (organic-inorganic) material based on nanocrystalline CdSe capped with EDTA and poly(O-toluidine) doped with camphor sulfonic acid (POT-CSA) is processed from solution and characterized in order to relate the device function (optical absorption, charge separation and transport properties) to active-layer properties and device parameters. POT/CdSe hybrid material has been synthesized using physical mixing method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are used to investigate the structural and morphological properties. The organic-inorganic composite system was applied as an active device component to demonstrate the electrical memory effects. The device exhibited a nonvolatile, resistive switching performance with a constant ON-OFF current ratio. The nonvolatile behavior was confirmed by applying a 2.5-V read pulse.