Influence of sapphire substrate miscut on the surface morphology and microstructure of AlN films grown by HVPE

Di Di Li,Xu Jun Su,Jing Jing Chen, Lu Hua Wang,Jun Huang,Mu Tong Niu, Xiaodan Wang, Xionghui Zeng,Ke Xu

Journal of Crystal Growth（2022）

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摘要

•AlN films grown on 0.2° and 4°- miscut sapphire substrates were investigated.•The surface morphology can be controlled by miscut angles and gas flow of HCl.•The narrow atomic steps on substrates promote the formation of inclined TDs.

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关键词

A1. Defects,A1. Crystal morphology,A1. Growth models,A3. Hydride vapor phase epitaxy,B1. Nitrides,B2. Semiconducting III-V materials

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