Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing
Si Joon Kim,Yong Chan Jung,Jaidah Mohan,Hyo Jeong Kim,Sung Min Rho,Min Seong Kim,Jeong Gyu Yoo,Hye Ryeon Park,Heber Hernandez-Arriaga,Jin-Hyun Kim,Hyung Tae Kim,Dong Hyun Choi,Joohye Jung,Su Min Hwang,Harrison Sejoon Kim,Hyun Jae Kim,Jiyoung Kim Applied Physics Letters（2021）
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