Study of SiO2 Interfacial Layer Growth during Fabrication Process of Ferroelectric HfxZr1−XO2-Based Metal-Ferroelectric SemiconductorTakashi Onaya,Toshihide Nabatame,Mari Inoue,Tomomi Sawada,Hiroyuki Ota,Yukinori MoritaECS Meeting Abstracts(2021)引用 0|浏览1暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要