InGaAs Photodiodes on Silicon by Heteroepitaxy

Bowen Song,Bei Shi,Si Zhu,Simone Šuran Brunelli,Jonathan Klamkin

26th Optoelectronics and Communications Conference（2021）

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摘要

InGaAs photodiodes were realized on Si by heteroepitaxy, demonstrating low dark current density of 0.45 mA/cm 2 , responsivity up to 0.64 A/W and a bandwidth of 11.2 GHz at 1550 nm.

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关键词

photodiodes,heteroepitaxy,dark current density,responsivity,frequency 11.2 GHz,wavelength 1550.0 nm,InGaAs-Si

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