WS₂ Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO₂ Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

A layered polycrystalline WS2 film is formed by radio-frequency (RF) magnetron sputtering and sulfur-vapor annealing (SVA). Its $p$ MISFET is successfully demonstrated with TiN/HfO2 top-gate stack, TiN contact, and ultra-thin body and box technologies. A WS2 film with a (002) plane is formed parallel to a substrate surface using RF magnetron sputtering, and its crystallinity is drastically enhanced by the SVA. $I$ – $V$ characteristics with $p$ -type operation are confirmed in WS2 MISFETs with a maximum field effect mobility of $1.5\times10$ −2 cm2V−1s−1. Therefore, our film-formation method is a promising candidate for $p$ MOSFETs in CMOS circuits.