ⁿBu₂Sn(SⁿBu)₂ and ⁿBu₃SnEⁿBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films

Fred Robinson,Peter J. Curran,C. H. (Kees) de Groot,Duncan Hardie,Andrew L. Hector,Katherine Holloway,Ruomeng Huang,Daniel Newbrook,Gillian Reid

Materials Advances（2021）

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摘要

LPCVD with the title compounds produces S-deficient SnS, or stoichiometric, semiconducting, resistive SnS or SnSe films with large positive Seebeck coefficients and an SnSe power factor of 0.4 μW cm−1 K−2 at 425 K.

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nBu2Sn(SnBu)2 and nBu3SnEnBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films

ⁿBu₂Sn(SⁿBu)₂ and ⁿBu₃SnEⁿBu (E = S or Se) – effective single source precursors for the CVD of SnS and SnSe thermoelectric thin films