Effect of Back Gate Biasing on Silicon Nanowire Field Effect Transistor

This work presents an experimental analysis of the substrate bias influence on the operation of Silicon Nanowire Field Effect Transistor (SiNW-FET). The device analysis has been performed by using atomic force microscope (AFM) and scanning electron microscope (SEM) to obtain the surface morphological characterization. Then, the electrical characterization was measured over a linear DC sweep, range from -1.5 V to 0.6 V with a step voltage of 0.01V and the variation on the substrate bias applied to the sample from -1V to 0V. As a result, the back gate was found to influence the conductivity of the nanowire with a higher than 0.79 V gate voltage to be applied. The device demonstrated a good behavior of p-type silicon nanowire field effect transistor and capable to operate as a biosensing device.