Research status and analysis of the surface insulation of the junction terminal of Press Pack IGBT Chips

As the voltage level of IGBT devices continues to increase, the insulation design of press-pack IGBT devices will be widely concerned as a key issue. First of all, this paper compares three typical insulation methods of gas insulation, silicon gel insulation and solid insulation under press-pack structure, and analyzes its advantages and disadvantages in detail. Secondly, based on the packaging structure of the press-pack IGBT devices, the electric field calculation method commonly used is introduced, and the limitations of this calculation method are demonstrated from both theoretical and experimental aspects. Thirdly, the electric field calculation method based on semiconductor simulation software is introduced, and the distribution of electric field on the chip surface under the common influence of chip terminal structure, package structure and material characteristics is analyzed.