Detailed k·p Theory for Bulk III–V Semiconductors

The chapter discusses a full implementation of k·p theory for the eight bands near the energy gap in a III–V semiconductor. This model can precisely calculate the band structure for both conduction and valence bands near the energy gap. Even though only eight bands are explicitly included, the terms due to interactions with “remote” bands are present in the complete version of the theory. The chapter consider the physical meaning of the results and the effect that strain has on the semiconductor band structure. The Hamiltonians for both zinc-blende and wurtzite crystals are introduced.