Design and Characterization of 4.5kv/ $15\mathrm{m}\omega$ SiC SuperMOS Half-bridge Module

A new 4.5kV SiC Austin SuperMOS half bridge module has been developed utilizing 1.2kV SiC MOSFET and 1.7kV SiC JFETs. To realize ultra-low on-state resistance, two parallel branches are used for the first time. The module exhibits excellent static and dynamic performance characteristics. Owing to low power-loop inductance, the 4.5kV module is turning off 100A at 3.4kV with less than 200V overshoot.