A triple-level cell charge trap flash memory device with CVD-grown MoS2

Minkyung Kim,Eunpyo Park, Jongkil Park, Jaewook Kim, YeonJoo Jeong,Suyoun Lee, Inho Kim,Jong-Keuk Park, Sung-Yun Park,Joon Young Kwak

Results in Physics（2022）

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摘要

•Oxide-engineered to improve coupling ratio of top-gated charge trap flash (CTF) memory based on CVD-grown MoS2.•Triple-level cell (TLC - eight memory states per cell) CTF device with long data retention characteristics.

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关键词

MoS2,Charge trap flash,Triple-level cell

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