Bias dependent physics-based model of low-frequency noise for nanowire type gate-all-around MOSFETs

Boram Yi,Geun Soo Yang,Sylvain Barraud, Laurent Bervard,Jae Woo Lee,Ji-Woon Yang

Solid-State Electronics（2022）

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摘要

•The low-frequency noise in nanowire type GAA MOSFETs was physically modeled.•The inversion carrier density was calculated according to the gate and drain bias.•The developed model can accurately LFN according to gate and drain voltages.•The model could help circuit designers to optimize noise performance.

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关键词

Compact model,Gate-all-around MOSFETs,Low-frequency noise,Nanowire MOSFETs

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