Hyperbolic-tan graded composition InxGa1-xAs layers for THz radiation emitters

A. Belio-Manzano,J. L. Regalado-de la Rosa, C. A. Mercado-Ornelas, I. E. Cortes-Mestizo,L. I. Espinosa-Vega,Javier Alanis,E. Castro-Camus,Donato Valdez-Perez,Yu. Kudriavtsev,V. H. Mendez-Garcia

Journal of Crystal Growth（2022）

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摘要

•Metamorphic InGaAs graded layers have been grown varying the In mole fraction.•Strain driven dislocations reactions during annealing improve the crystal quality of graded layers.•Energy band bending due to hyperbolic-tan profiles accelerates free carriers improving THz emission.•New research line throughout near-surface band bending is envisioned for THz applications.

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关键词

B1. Gallium compounds,B3. THz emitters,A1. Graded composition,A1. Strain

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