Mechanism of crack formation in strained SiGe(1 1 1) layers

Youya Wagatsuma,Md. Mahfuz Alam,Kazuya Okada,Rena Kanesawa,Michihiro Yamada,Kohei Hamaya,Kentarou Sawano

Journal of Crystal Growth（2022）

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摘要

•It was found the crack formation was suppressed for the SiGe on the patterned GOS.•SiGe layers on the patterned GOS was completely strained.•Crack formation was caused by propagation.

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关键词

A1. Defects,A1. Surface structure,A3. Molecular beam epitaxy,B1. Germanium silicon alloys,B2. Semiconducting silicon compounds

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