Melt convection and temperature distribution in 300 mm Czochralski crystal growth with transverse magnetic field

Journal of Crystal Growth(2022)

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摘要
•Melt convection opposite to the crystal rotation is observed below the interface when crystal conductivity is considered in 3D simulation.•The mechanism of how the currents caused by crystal rotation influence the melt flow below the interface is clarified.
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关键词
A2. Czochralski silicon crystal growth,A1. Numerical simulation,A1. Melt convection,A1. Transverse magnetic field,A1. Crystal conductivity
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