Pulling Thin Single Crystal Silicon Wafers from a Melt: the New Leading-Edge Solar Substrate

The Floating Silicon Method (FSM) has been established as a viable, stable method for growing single crystal ribbons directly from a silicon melt. With intense helium jet cooling to drive the linear progress of a [111] facet, pulled in the 110 direction, ribbons in the 0.6 - 3.0 mm thickness range can be grown at linear growth rates from 0.3 mm/s to > 6 mm/s as reported in the literature. We report on recent progress towards growing (100) oriented ribbons with a net thickness of < 200 mu m and a ribbon width up to 18 cm using a stable, continuous process in the Leading Edge prototype furnace. The 3D details of the single crystal growth are explained using the mechanics of the Limit Cycle Theory, with novel Internal Side Effect morphology described by a proposed Facet Flow Theory. Grown-in crystalline defect distributions are described as well as values of critical impurities like oxygen, carbon, dopants, and metals that are relevant for use as wafers for solar cells.