Bandgap energy model for GaInNAsSb/GaAs alloys with high N content and strain influence

Riku Isoaho,Arto Aho,Antti Tukiainen,Turkka Salminen,Mircea Guina

Journal of Crystal Growth（2022）

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摘要

•A novel interpolation method based on BAC modelling for predicting bandgap energies of dilute nitride GaInNAsSb compounds.•The influence of lattice strain is incorporated in the model.•Excellent correlation with experimental values in a relatively broad composition range including alloys with up to 8% of N.

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关键词

A1. Characterization,A3. Molecular beam epitaxy,B1. Antimonides,B1. Nitrides,B2. Semiconducting III-V materials

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