Multifunctional Dual Gated Coupling Device Using Van Der Waals Ferroelectric Heterostructure

2D ferroelectric materials have long attracted attention because of their switchable electrical polarization. However, it is still difficult to control the stability of the ferroelectric polarization. Here, ReS2, h-BN, and 2D ferroelectric material alpha-In2Se3 are combined to construct van der Waals heterostructure. The dual-gated coupling configuration polarizes the ferroelectric alpha-In2Se3 stably and effectively, allowing it to act as high-performance nonvolatile memory, programmable rectifier, and negative capacitance field-effect transistor. As nonvolatile memory, the device exhibits a large memory window (77%), large on/off ratio (>10(6)), ultralow programming state current (approximate to 10(-13) A), and long data retention (>10(4) s). As a programmable rectifier, the device can regulate rectification in a wide range of gate voltages with a large rectification ratio (3 x 10(5)). When used as field-effect transistor, the device demonstrates hysteresis-free, the minimum sub-threshold swing of 24.5 mV dec(-1) at room temperature. These results may inspire further development of ferroelectric van der Waals heterostructure devices.