Optimisation of trench filling in GaN towards vertical HEMT structures

Jan-Patrick Scholz, Chen Chen,Ferdinand Scholz

Journal of Crystal Growth（2022）

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摘要

•Etched trenches in GaN overgrown with flat layer.•Best overgrowth conditions found by varying pressure, growth rate, V-III ratio and temperature.•Fair electrical results of HEMTs grown on regrown layer.

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关键词

A3: Vapor phase epitaxy,B1: Gallium compounds,B1: Nitrides,B2: Semiconducting III-V materials,B3: High electron mobility transistors,B3: Field effect transistors

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