Physics-Based Analytical Channel Charge Model of Inx Ga1-x As/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes
IEEE Journal of the Electron Devices Society(2022)
摘要
This paper presents a physics-based analytical channel charge model for indium-rich In
x
Ga
1-x
As/In
0.52
Al
0.48
As quantum-well (QW) field-effect transistors (FETs) that is applicable from the subthreshold to strong inversion regimes. The model requires only seven physical/geometrical parameters, along with three transition coefficients. In the subthreshold regime, the conduction bands (
$E_{C}$
) of all regions are flat with finite and symmetrical QW configurations. Since the Fermi–level (
$E_{F}$
) is located far below
$E_{C}$
, the two-dimensional electron-gas density (
$n_{2{-}DEG}$
) should be minimal and can thus be approximated from Maxwell–Boltzmann statistics. In contrast, the applied gate bias lowers the
$E_{C}$
of all structures in the inversion regime, yielding band-bending of an In
0.52
Al
0.48
As insulator and In
x
Ga
1-x
As QW channel. The dependency of the energy separation between
$E_{F}$
and
$E_{C}$
on the surface of the In
x
Ga
1-x
As QW channel upon
$V_{GS}$
enables construction of the charge–voltage behaviors of In
x
Ga
1-x
As/In
0.52
Al
0.48
As QW FETs. To develop a unified, continuous and differentiable areal channel charge density (
$Q_{ch}$
) model that is valid from the subthreshold to strong inversion regimes, the previously proposed inversion-layer transition function is further revised with three transition coefficients of
$\eta $
,
$\alpha $
and
$\beta $
in this work. To verify the proposed approach, the results of the proposed model are compared with those of not only the numerically calculated Qch from a one-dimensional (1D) Poisson–Schrödinger solver, but also the measured gate capacitance of a fabricated In
0.7
Ga
0.3
As QW metal-insulator-semiconductor FET with large gate length, yielding excellent agreement between the simulated and measured results.
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关键词
InxGa1-xAs/In0.52Al0.48As QW FETs,two-dimensional electron-gate density (n₂-DEG),subthreshold regime,inversion regime,near-threshold regime
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