A Novel Encrypted Computing-in-Memory (eCIM) by Implementing Random Telegraph Noise (RTN) as Keys Based on 55nm NOR Flash Technology

IEEE Electron Device Letters(2022)

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摘要
A novel encrypted Computing-in-Memory (eCIM) architecture is proposed based on 55nm NOR Flash memory technology, wherein the current fluctuations caused by random telegraph noise (RTN) in flash cells are utilized as the intrinsic encryption source. Furthermore, aiming at the low-power consumption with high bit-density, the near-subthreshold region of the flash cell is used for 2-bit/cell operation. It is demonstrated that, in the designed 32-bit floating-point (FP) calculation architecture, ultra-low power dissipation (0.24 pJ/bit) can be achieved with high calculation accuracies after the decryption.
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关键词
NOR flash memory,computing in memory,encryption,random telegraph noise
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