Electrical characteristics investigation of ferroelectric memories using stacked and mixed hafnium zirconium oxides

Yi-Wei Fang, Zih-Jing Yang, Ruo-Yin Liao,Pei-Tien Chen,Cun-Bo Liu,Kai-Yang Huang,Hsiao-Hsuan Hsu,Chun-Hu Cheng,Wu-Ching Chou,Shih-Hao Lin,Ye Zhou

Thin Solid Films（2022）

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摘要

•Ferroelectric characteristics of mixed and stacked HfZrO devices were investigated.•Stacked HfZrO device showed a much stronger ferroelectricity than mixed one.•A surface nitrogen plasma treatment can alleviate ferroelectric domain pinning.•Nitrogen incorporation into stacked HfZrO further improved the endurance cycling.

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关键词

Ferroelectric,Hafnium zirconium oxide,Nitrogen plasma,Endurance

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