Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure (adv. Sci. 21/2022)

Ferroelectric Field-Effect-Transistors In article number 2200566, Sungjoo Lee and co-workers report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP2S6/α-In2Se3). Leveraging enhanced polarization originating from the dipole coupling, the fabricated device exhibits a large memory window and nonvolatile memory characteristics with a long retention time and stable cyclic endurance, providing a promising pathway for exploring low-dimensional ferroelectronics.